gaas mesfet transistor page 1 of 3 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. CF001-01 march 2008 - rev 15-mar-08 features high gain: usable to 44 ghz p1db power: 21 dbm wfer qualification procedure customer wafer selection available general description mimix CF001-01 gaas-based transistor is a 300 um gate width, sub-half-micron gate length gaas device with silicon nitride passivation. the CF001-01 provides high gain up to 26 ghz. it is suitable for general purpose and driver amplifier applications with up to +21 dbm power from a single fet. this device can also be used in oscillator applications. the CF001-01 is available in chip form and is suitable for airborne, shipboard and ground-based equipment. the devices are 100% dc tested and every wafer is qualified based on sample rf and reliability testing. screening includes mil-std-750 class b, class s and commercial screening. these devices are also available in packaged form. please consult the cfb0101-b, cfa0101-a datasheets or contact the factory for further information. 12.0 21.0
page 2 of 3 gaas mesfet transistor mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. CF001-01 march 2008 - rev 15-mar-08 CF001-01
page 3 of 3 handling and assembly information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not ingest. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to aff ect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. rohs compliant parts - all mimix products are rohs compliant unless otherwise specified. part number for ordering description CF001-01-000x where ?x? is rohs compliant die packed in ?v? - vacuum release gel packs or w? - waffle trays die attach: conductive epoxy or preform die attach is recom- mended. for preform die attach: preform: ausn (80% au, 20% sn); stage temperature: 290 oc, +/-5 oc; handling tool: tweezers; time: 1 min or less. wire bonding: wire size: 0.7 to 1.0 mil in diameter (pre- stressed); thermocompression bonding is preferred over thermosonic bonding. for thermocompression bonding: stage temperature: 250 oc ; bond tip temperature: 150 oc; bonding tip pressure: 18 to 40 gms depending on size of wire. ordering information gaas mesfet transistor mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2008 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. CF001-01 march 2008 - rev 15-mar-08 caution: esd sensitive appropriate precautions in handling, packaging and testing devices must be observed. proper esd procedures should be followed when handling this device.
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